| 학회 |
한국재료학회 |
| 학술대회 |
2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 |
23권 2호 |
| 발표분야 |
E. 환경/센서 재료 분과 |
| 제목 |
Characteristic Comparison between Monolithic and Released Strain Gauge Pressure Sensor |
| 초록 |
Silicon strain gauges fabricated by MEMS process represented different performance values even when measured under the same conditions, depending on the design and structure. The silicon strain gauge structure could be roughly categorized with monolithilc strain gauge in which the silicon gauge pattern was connected to the chip frame, and released strain gauge in which the chip frame was etched and only the silicon gauge pattern existed. Monolithic and released strain gauges were fabricated to compare gauge performances according to design and structure in this study. Manufacturing process of the two gauges was the same until the ion implantation and annealing process were implemented on the SOI wafer. However, upper pattern of monolithic strain gauge attached on insulating layer(SiO2) and the back surface was ground up to 50um or less through the CMP process. In case of released strain gauge, the upper pattern was formed by dry etching and the strain gauge was released by BOE solution. The monolithic and released strain gauges were fabricated by the methods mentioned before were attached on diaphragm to compare and analyze the input and output characteristics and measurement error.
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| 저자 |
Jun hwan Choi, Jung Sik Kim
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| 소속 |
Univ. of Seoul |
| 키워드 |
monolithic silicon strain gauge; released strain gauge; hysteresis; non-linearity; TCR
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| E-Mail |
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