| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | Structural characterization of β-Ga2O3 films grown on GaN/(0001)sapphire substrates by Plasma Assisted Molecular Beam Epitaxy |
| 초록 | Recently, β-Ga2O3 with a wide-bandgap of 4.9 eV is attracting attention as a potential candidate for application to high power devices, deep-UV photodetectors and transparent electronic devices. Various techniques have been used to grown β-Ga2O3 films such as chemical vapor deposition (CVD), pulsed laser deposition (PLD), Plasma Assisted Molecular Beam Epitaxy (PAMBE). Almost studies have been focused on investigating structure and properties of β-Ga2O3 grown on sapphire directly. There have only been some studies about growth of β-Ga2O3 on GaN [1-2]. In this study, we report the structure characterization of β-Ga2O3 films on GaN/(0001) sapphire grown by MBE technique. The GaN layer was grown on nitridated c-plane sapphire substrate and then the grown GaN layer was oxidized by using oxygen plasma. This oxidized layer has a role as a nucleation layer for the growth of β-Ga2O3 film. Finally, the β-Ga2O3 films were grown on oxidized GaN layer. The growth processes were monitored by in-situ reflection high energy electron diffraction (RHEED) observation. The surface morphology and growth rate were investigated by atomic force microscope and scanning electronic microscope. The crystal quality and orientation were characterized by X-ray diffraction. References [1] S. Nakagomi, Y. Kokubun, N. Villora, N. Tsai, and N. There, Phys. Status Solidi B 5 (2016). [2] S. Lee, J. Hwang, J. Kim, S. Jeong, C. Cho, and S. Lee, Appl. Phys. Lett. 89 (2006) 182906. |
| 저자 | Trong Si Ngo1, Duc Duy Le2, Soon-Ku Hong1, Duy Tran Khanh2 |
| 소속 | 1Department of Advanced Materials Science and Engineering, 2Chungnam National Univ. |
| 키워드 | Plasma Assisted Molecular Beam Epitaxy (PAMBE); β-Ga<SUB>2</SUB>O<SUB>3</SUB>; GaN layer. |
