| 초록 |
We report the drying-mediated alignment of semiconductor nanowires on periodically wrinkled templates with controlled wettability. On wrinkled templates with a small contact angle and a high aspect ratio, the nanowire solution droplet was pinned at the three-phase contact line (TCL); this occurred via the formation of liquid filaments along the troughs of the wrinkled patterns. As evaporation proceeded, the outward hydrodynamic flows induced at the TCL led to the directed alignment of the nanowires along the troughs. The nanowires aligned on the wrinkled templates were then transferred to target substrates by first applying a strain to the templates to remove the surface wrinkles, and then placing the strained templates in conformal contact with the substrates. This simple and versatile approach to the alignment of nanowires has the potential to be applied to the production of low-cost, large-area printed electronics such as nanowire field-effect transistors. |
