| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Performance of Cu2ZnSn(SexSe1-x)4 thin film solar cells with sputtered Zinc tin oxide buffer layers |
| 초록 |
In this present study, RF sputtered zinc tin oxide (ZTO) buffer layers were deposited on to earth abundant CZTSSe absorbers. Replacing wide band ZTO buffer layers for CdS films in CZTSSe solar cells will improve the performance of the devices due to losses at short wave length there by increasing the short circuit current density (Jsc). The XRD studies reveal that as deposited films at various temperatures were amorphous in nature. The optical transmittance of the ZTO buffer layers showed high transmittance in the visible region and calculated band gaps from Tacu’s plots are about 4.09 eV. The CZTSSe thin films solar cells showed power conversion efficiencies about 2.5%. Whereas pure selenide CZTSe thin film solar cell showed about 5.1% compared to solar cells fabricated with CdS buffer layer (4.0%). The improved performance was due to low absorption losses at the short wavelength region of the external quantum efficiency spectra. The devices also exhibited low fill factors. The sputter damage of absorber layer, zinc oxide diffusion into absorber and formation of interface defects leads to poor performance of the CZTSSe devices fabricated with rf sputtered ZTO buffer layers. Furthermore the reduction of surface damage at the interface must be reduced to enhance the power conversion efficiencies of Cadmium free CZTSSe thin film solar cells. |
| 저자 |
R.B.V.Chalapathy1, Jin Hyeok Kim2
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| 소속 |
1Optoelectronics Convergence Research Center, 2Department of Materials Science and Engineering Chonnam National Univ. |
| 키워드 |
CZTSSe; Earth abundant; RF-sputtering; Zinc tin oxide; Buffer layers
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| E-Mail |
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