| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 | Improvement in the Performance of ZnO Thin-Film Transistors with Doped Hf and Sn doping elements |
| 초록 | Transparent thin-film transistors (TTFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for the next generation displays with high mobility. A lot of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been extensively researched. Especially, ZnO is a direct band gap semiconductor with a wide energy band gap of 3.37 eV, so that optical transparency in the visible spectrum, suitable for transparent electronics, and high mobility and low temperature processing. However, intrinsic ZnO thin-film transistors can change electrical characteristics by external environments such as bias stress, furthermore, processing on high temperature is unstable. In order to solve these problems, Hf and Sn atoms were considered that dopants of stabilizer and heavy metal cations (HMCs) to improve the carrier transport by orbital overlap. In this study, we fabricated staggered bottom-gate structure ZnO-TFTs and patterned channel layer used shadow mask. Then we compare to the performance between intrinsic ZnO-TFTs and hafnium and tin doped ZnO-TFTs. The performances were measured using semiconductor analyzer. The results showed that performances of ZnO-TFTs were dramatically improved by hafnium and tin doping on ZnO-TFTs. In addition, by doping hafnium doping on ZnO-TFTs, high stability ZnO-TFTs were obtained both negative and positive bias temperature stability. |
| 저자 | 강유진, 문대용, 한동석, 박재형, 윤돈규, 박종완 |
| 소속 | 한양대 |
| 키워드 | ZnO TFT; Hafnium and Tin doping; amorphous oxide semiconductors (AOSs); HMC(heavy metal cation) |
