| 학회 |
한국재료학회 |
| 학술대회 |
2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 |
24권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Realization of p-type SnO2 thin film by spray pyrolysis deposition |
| 초록 |
Beyond the Si-based electronics, oxide based semiconductors have achieved much attentions for transparent electronics. Oxide-based p-type semiconductors have been regarded as difficult to fabricate due to their intrinsic n-type conductivity. In this paper, we have succeeded in fabrication of a p-type SnO2 semiconductor by Eu-doping. Hall measurement showed that Eu-doped SnO2 thin films were p-type semiconductors and their hole concentration increased from 4.521x1015 to 2.899x1016 cm-3 and the sheet resistance decreased from 3.252x104 to 1.566x104 Ω/cm2 as the Eu source content increased from 0.05 to 0.2 mM. The structural and chemical analysis verified that the Eu elements have been incorporated into the SnO2 lattice successfully and replaced the Sn lattice sites to form the acceptor levels. The optical and electrical results about the p-SnO2 would be discussed deeply in the presentation. |
| 저자 |
박정석1, 김도연2, 김우병2, 박일규1
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| 소속 |
1서울과학기술대, 2단국대 |
| 키워드 |
<P>Eu dope tin oxide; p-type semiconductor; X-ray diffraction; XPS; Spray pyrolysis deposition; Hall measurement</P>
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| E-Mail |
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