| 학회 |
한국고분자학회 |
| 학술대회 |
2020년 가을 (10/05 ~ 10/08, 부산컨벤션센터(BEXCO)) |
| 권호 |
45권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Molecule Charge Transfer Doping for p-Channel Solution-Processed Copper Oxide Transistors |
| 초록 |
The doping of semiconductors plays a critical role in improving the performance of modern electronic devices by precisely controlling the charge carrier density. However, the absence of a stable doping method for p-type oxide semiconductors has severely restricted the development of metal-oxide based transparent electronics. Here, we report an efficient doping process for p-type oxide semiconductors by using molecule charge transfer doping with F4TCNQ. The selections of a suitable dopant and geometry play a crucial role in the charge-transfer doping effect. The insertion of F4TCNQ dopant film between a Au S/D electrode and solution-processed p-type CuxO film in bottom-gate top-contact thin-film transistors (TFTs) provide a mobility enhancement of over 20-fold with the desired threshold voltage adjustment. By combining doped p-type CuxO and n-type IGZO TFTs, a solution-processed transparent complementary metal-oxide semiconductor inverter is demonstrated with a high gain voltage of 50. |
| 저자 |
AO LIU1, 노용영2
|
| 소속 |
1Pohang Univ. of Science and Technology, 2Department of Chemical Engineering |
| 키워드 |
molecule charge transfer doping; p-type oxide semiconductor; thin-film transistor; solution process |
| E-Mail |
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