| 초록 |
Organic-inorganic perovskite have been emerging semiconducting material for high-performance optoelectronics such as solar cells, photodetectors, and laser due to their outstanding intrinsic properties. Among them, Two-dimensional Ruddlesden-Popper perovskite(2DRP) has advantages for horizontal charge transport and good air stability owing to layered structure. Based on these merits, several studies have been conducted on transistors over the past two decades. However, perovskite transistors still suffer from inherent defects and high ion migration at room temperature that cause great hysteresis in channel. Therefore, a strategy to reduce hysteresis is required for stable operation. Herein, we fabricated hystereses-free perovkite transistors at room temperature via alkali metal cation additive and self-assembled monolayer. The enhancement of electrical properteis on perovskite transistors was confirmed and improvment on the perovksite film was observed by SEM, PL, GIWAXD. |
