| 초록 |
Post CMP cleaning is necessary in order to remove the contaminants after CMP process. The zeta potential of slurry particle and substrate has been considered to be a critical factor in terms of particle adhesion and removal. The fundamental research such as the calculation and measurement of adhesion forces between slurry particle and wafer surfaces can enhance the understanding of cleaning mechanism and development of cleaning process. The presence of more than two different materials during CMP introduces new defects at the materials interface, corrosion and severe scratches. Also introduction of low k materials caused water marks on polished surface. Device specific chemistry and cleaning process should be introduced and developed for Cu/low k cleaning. |
