| 초록 |
Organic-based non-volatile memory devices have great potential as next generation electronic devices due to simple processability, low weight, and flexibility.An active layer of organic resistive random access memory (ReRAM) consists of a polymer composite with a matrix lacking charge trap and a conducting block including charge trapping sites. However, the non-uniform dispersion of the conductive part causes low reliability of the device performance. In addition, excessive energy for electron injection required due to insufficient charge trap in the organic material deteriorates the device performance, making it difficult to utilize its practical application. Herein, we demonstrate that a pyramidal Al structure electrode can solve issues. A sharp tip of the electrode increases the concentration of injected charge carriers into the polyimide layer and enhances the electric field of the active layer. As a result, the pyramidal structure device exhibits resistive switching behaviors. |
