| 초록 |
A novel composite of poly(3,4-ethylenedioxythiophene)(PEDOT)/SiOx as a hole conductor was prepared by in situ redox polymerization on the ITO glass for a polymer photovoltaic device. In order to provide mechanical strength on PEDOT film, inorganic silicate, tetraethylorthosilicate (TEOS) was incorporated by in-situ sol gel reactions. The conductivity and optical transmission of the composite were about 400~500 S/cm and 80%. On the PEDOT/SiOx layer were deposited the active layer of P3HT/PCBM by spin coating and then, Al layer by a thermal evaporation. The prepared polymer photovoltaic device was annealed at 150℃. The properties of the device were characterized by the short-circuit (Jsc), open-circuit(Voc), fill factor(FF), and power conversion efficiency(PCE) under AM 1.5 illumination at 100mA/cm2. |
