| 초록 |
In this study, I present two dimensional electron gas formation in short-range-ordered oxide heterointerfaces and its applications as high mobility oxide transistors and flexible transparent conductors. Two heterointerface systems are introduced; (1) Al2O3/In2O3 heterojunction channel with all nanocrystalline and amorphous phases and (2) photochemically activated H-doped InGaZnO conducting channel. In the first study, we fabricated the visible transparent (＞90% optical transmission) Al2O3/In2O3 heterojunction system. The Al2O3/In2O3 heterojunction acts as two-dimensional (2-D) metallic channel fabricated at a low temperature (~150 ℃) compatible to the transparent flexible device. In the second study, the photochemical hydrogen radical insertion by UV-assisted water splitting was performed on InGaZnO thin film. Finally, I will also briefly introduce application of a similar 2D Mott interfacial channel of VOx to emulate the artificial synaptic function device. |
