| 초록 |
A reaction system of tetrakis-diethyl-amido-titanium(TDMAT) and H2O2 was evaluated as a possible process to prepare TiO2 thin films using Atomic Layer Deposition(ALD) process. Avantage of this process was that films were deposited at low temperature. Titanium dioxide thin films were grown by Atomic layer deposition(ALD) at 100-300℃ using tetrakis-diethyl-amido-titanium (TDEAT) that is similar structure with TDMAT, and H2O2 as a precursor and reactant, respectively. The effects of deposition temperature, reactant pulse and purge times on the film growth rate were investigated to optimize the ALD process of TiO2. Anatase TiO2 was prepared by annealing in the Air condition. All samples were tested a photocatalytic activity in methylene blue aq. Concentration of Methylene blue was evaluated by UV-visible spectrophotometer. TiO2 film properties such as step coverage, composition, and crystallinity were evaluated by using scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS) and X-ray diffractometer (XRD). |
