| 초록 |
Graphene is one of the most promising materials for future nanoelectronic devices including graphene nanoribbon FET, chemical/biological sensing platform and energy devices due to its large surface area, high chemical stability and mechanical or thermal robustness, thereby dramatically increasing the demand for graphene in recent years. However, to realize the applications of graphene, especially on nanoelectronic and thermoelectric fields, it is of much importance to understand as well as to tune its semiconducting properties. Herein, we report a fundamental study on conversion between n- and p-type reduced graphene oxides depending on the thermal reduction temperature. The charge carrier is an electron in the range of 300–450°C and 800–1000°C, whereas the charge carrier is a hole in the range 450-800°C. It is because of oxygen functional groups depending on the annealing temperature. These results were characterized by XPS, Raman, FT-IR, Seebeck coefficient and Hall measurement. |
