| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Sulfurization of large-grained CIGS film grown by atmospheric annealing of Cu/(In,Ga)2Se3 stacked precursor for reducing interface recombination |
| 초록 | The Cu(In,Ga)Se2 (CIGS) is a promising material in the photovoltaics due to high absorption coefficient about 105 cm-1 and band-gap engineering by adding the S or Al. For industrial area, the precursor preparation and reactive annealing(selenization and sulfurization process) so-called two-stage process is attractive because the control of composition and thickness with various deposition methods is possible in the large area. However the source of selenization is H2Se gas which is highly toxic. In addition, the CIGS film adhesion is poor with Mo back-contact during selenization of precursor because of stress built-up by volume expansion and also voids are formed between CIGS/Mo interface by Kirkendall effect of unbalanced metal and Se ion inter-diffusion moving to surface. For reducing voids and adhesion problems, we suggest Cu/(In,Ga)2Se3 stacked precursor containing Se to control of the Se reaction with metal ions. During N2 annealing of the precursors below 450oC in the atmospheric condition, large-grained CIGS film growth is observed without voids and adhesion problems. The precursor reactions into CIGS were investigated by SEM and XRD analysis. Se composition in the CIGS films was adjusted using atmospheric reactive annealing with Se vapor because originally Se is deficient in the precursor. And for reducing interface recombination of CIGS films, sulfurization process was studied with various annealing temperature. The amount of sulfur and its depth-profiles in CIGSS films by sulfurization were characterized in relation to recombination currents of CIGSS solar cells. Precursors were prepared on Mo coated soda lime glass substrate by evaporation and CIGSS solar cells, applied with Cu/(In,Ga)2Se3 precursor and annealing, were achieved the conversion efficiency of 12.7% with large grain and no voids. |
| 저자 | 정광선, 김승태, 권혁상, 안병태 |
| 소속 | 한국과학기술원 신소재공학과 |
| 키워드 | Sulfurization; CIGSS; Interface recombination; Growth reaction |
