| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Reaction path study of Cu2ZnSn(S,Se)4 film by the sulfurization of a Cu/SnSe2/Znse stacked precursor |
| 초록 |
A Cu2ZnSnSe4 (CZTSSe) solar has shown its efficiency above 8%. However, the band gap of CZTSe is about 1 eV and should be widened to increase the cell efficiency above 12%. For the purpose, we sulfurized the CZTSe film to incorporate S and form CZTSSe film. The direct sulfurization of CZTSe film resulted in too many voids at the CZTSSe/Mo interface. To avoid the formation of the voids we sulfurized using a Cu/SnSe2/ZnSe stacked precursor. However, the direct sulfurization of the stacked selenide precursor cause the lift-off of the sulfurized film. So we applied two step annealing process, where the precursor was pre-annealed in either S or N2 environment at low temperature and then annealed at a higher temperature. It was found that the morphology of the CZTSSe films strongly depended on the pre-annealing environment. The temperature-dependence of the reaction path will be presented in the conference.
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| 저자 |
Young Min Ko1, Ludmila Larina2, R.B.V. Chalapathy1, Byungha Shin2, Byung Tae Ahn3
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| 소속 |
1Department of Materials Science and Engineering, 2KAIST, 3Departmentials Science and Engineering |
| 키워드 |
CZTSSe film; stacked precursor; sulfurization; dense film; reaction path
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| E-Mail |
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