| 초록 |
Recently, research on Cu2ZnSn(S, Se)4 (CZTSSe) thin film solar cells has been actively conducted to increase interest in low-cost solar cell materials. Especially CdS in the buffer layer has caused the need for alternative materials due to problems such as toxicity and recombination. Among such substances, there is typically Zn(O, S). It is inexpensive and gives better alternative to the problem of recombination because the band-gap changes according to the O/S ratio as a non-toxic substance. In this study, we fabricated cells to find the Zn(O/S) ratio to obtain higher efficiency than CdS cells. The absorber layer and Zn(O, S) buffer layer were deposited by using Sputter and Atomic layer deposition (ALD) system, respectively. The microstructural, optical and device efficiency was studied using field emission scanning electron microscopy (FE-SEM), external quantum efficiency (EQE) and photovoltaic J-V techniques, respectively. Through this study, we confirmed the possibility of Zn(O, S) as buffer materials. |
