| 초록 |
Cu2ZnSn(Sx,Se1-x)4(CZTSSe) absorber thin films were prepared on Mo coated soda-lime glass substrates by sulfurization of stacked Cu/Sn/Zn precursor thin films. Absorber layer were fabricated after sulfo-selenization process carried out in rapid thermal annealing (RTA) system. The resulting films were processed into solar cell devices by following standard procedures, including chemical bath deposition of CdS (~60 nm), radio frequency (RF) sputtering of i-ZnO (~100 nm) and Al-ZnO (AZO) (~600 nm), and direct current (DC) sputtering of a patterned Al grid as the top electrode. After RTA, post annealing treatment (PAT) at a temperature of 100℃, 200℃, 300℃ and 400℃. The effects of post annealing treatment on the microstructure, crystallinity, electrical properties, and cell efficiencies of CZTSSe thin film solar cells have been studied by using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman spectroscopy, I-V measurement, Photo-luminescence(PL). The PAT is found efficacious for the efficiency improvement of the CZTSe based solar cell. |
