화학공학소재연구정보센터
학회 한국재료학회
학술대회 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔)
권호 27권 2호
발표분야 C. 에너지 재료 분과
제목 Achieving Over 4% Efficiency for Next Generation SnS Thin Film Solar Cells
초록 Orthorhombic tin sulfide (SnS) is promising absorber material for thin-film solar cells (TFSCs) because it has an ideal optical band gap (~1.3 eV) and it comprises of relatively earth abundant constituents and non-toxicity. But till date, the cell efficiency has mostly remained below 4% which is fairly low compared to its theoretical limit of ~32%, because of low heterojunction quality with CdS buffer layer.  
This study reports the highest efficiency of 4.225% for vapor-transport-deposited (VTD) SnS absorber/CdS heterojunction solar cells with good long-term stability. These improved characteristics are primarily attributed to the reduction in interface defects of the SnS/CdS heterojunction, which can occur either during the deposition of transparent electrodes (Al-doped ZnO) or direct annealing of SnS/CdS heterojunction at 300°C. The enhanced heterojunction interface quality is well supported by the substantially reduced reverse saturation current density and shunt conductance of the fabricated devices measured under dark conditions. Although the SnS/CdS device exhibits efficiency over 4%, significant short-circuit current loss mainly due to recombination was revealed by quantum efficiency and optical analysis. Admittance analysis shows the presence of numerous defect densities of Sn and S vacancies (>1017 cm-3) in the VTD-grown SnS absorber. The detailed analysis of the device performance will be presented.  
저자 Jae Yu Cho, Jaeyeong Heo
소속 Chonnam National Univ.
키워드 Tinsulfide; Thin film solar cells; Heterojunction; Interface
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