| 초록 |
The window layer of solar cells is an important layer that transmits sunlight and generates elctric current as the carriers move. Aluminum(Al)-doped znic oxide(AZO) has been sidely applied as the window layer in thin-film solar cells(TFSCs) owing to its favorable optoelectronic properties, as its properties can be controlled and further improved with suitable dopants. In this study, we strategically co-doped Al and Fluorine (F) in ZnO thin films (FAZO) to improve the transittance with controlled resistivity. To study the influence of F dopant on the structural, optical, and electrical properties of FAZO thin films, the F doping concentration is varied (0-1.5%) while keeping the Al content fixed (2%). With increasing F doping concentration, the carrier conentration, transmittance, and optical bandgap values increase, whereas, the sheet resistance and resistivity of the single-lyaer FAZO thin films devrease, compared to the reference AZO film. Under the optimum condition of 1% F, FAZO thin films exhibit the lowest sheet resistance of 5.84 Ω/sq, in addition to the highest transmittance of 89.3% in the visible light region. Furthermore, the FAZO thin films applied in CZTSSe device shows significant enhancements in the short-circuit current density (Jsc) and fill factor(FF), resultin in improved device performance from ~8 to 9.57 % |
