화학공학소재연구정보센터
학회 한국재료학회
학술대회 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 )
권호 22권 1호
발표분야 G. 나노/박막 재료 분과
제목 Atomic-layer-deposited Zn(O,S) n-type buffer layers for Cu2ZnSn(S,Se)4 thin-film solar cells
초록 A solar cell is an electrical device that converts light energy into electricity. One of the crucial parts for realizing high-performance thin-film-based solar cells is an n-type buffer layer. Instead of the widely-used, but toxic CdS buffer layer, we investigated the possibility of using Zn(O,S) as an alternative material grown by atomic layer deposition (ALD). First, structural, electrical, chemical, and optical properties of Zn(O,S) thin films will be studied. In addition, this new buffer layer was applied for earth-abundant Cu2ZnSn(S,Se)4 solar cells and the highest power-conversion efficiency (PCE) of ~5% was achieved by optimizing oxygen-to-sulfur (O/S) ratio. Detailed device analysis including current-voltage (J-V), external quantum efficiency (EQE), dark current-voltage, transmission electron microscopy (TEM) and energy dispersive X-ray analysis (EDX) will be presented.
저자 홍희경, 송광염, 조재유, 허재영
소속 전남대
키워드 Solar cells; Buffer layers; ALD
E-Mail