| 초록 |
In this paper, we suggest the composite dielectric materials, for OTFTs gate insulator, consisting of TiO2 precursor and cross-linked poly-4-vinylphenol (PVP) in order to operate at low voltage. The OTFT involving PTC dielectric layer shows low leakage current due to dense chemical structure formed by cross-linked reaction between polymer and TiO2 precursor. Because of TiO2 precursor, it composites well in cross-linked PVP, the composite solution is possible to use soluble process, such as spin coating, to make device. We fabricated the OTFTs with pentacene as semiconducting layer, which was improved field-induced current than that of conventional transistors due to TiO2polymer composite gate insulator with rather increased dielectric constant. The OTFTs, including TiO2 materials in dielectric layer, exhibits the performance of transistor with low threshold voltage and enhanced on/off ratio in low operating voltage. |
