| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | 2-Dimentional Perovskite Oxide Thin Films Deposited by Atomic Layer Deposition for High-k Application |
| 초록 | As the size of the DRAM is scaled down, the new high-k materials have received considerable attention. Among high-k materials, the dielectrics based on Zr-, Hf- have extensively been used in semiconductor industry. However, it is known that there is a limitation to obtaining an equivalent oxide thickness of under 0.5 nm. Therefore, new high-k materials, such as rutile-TiO2 and SrTiO3, have attracted a candidate in next generation DRAM devices. Although the new high-k materials could have higher dielectric constant, there are some problem of degradation of dielectric properties with decreasing thickness owing to the degradation of crytallinity in the applicable thickness range for DRAM capacitor. Therefore, we would like to introduce a totally new dielectric oxide thin film having 2-dimensional (2D) perovskite structure. In previous reports, 2D perovskite thin films formed by Langmuir-Blodgett method were reported that showed a remarkable dielectric constant (~200) regardless their thickness. However, this wet based process does not suitable for application to device integration in CMOS industry. Therefore, we investigated, for the first time, the structural and electrical properties of 2D perovskite oxide thin film deposited by atomic layer deposition. The SrNbO thin films with various composition were deposited by ALD using super-cycle concept and the physical and electrical properties of deposited films were characterized using RBS, TEM, XRD and I-V, C-V measurement. |
| 저자 | Seung Won Lee1, Jeong-Hun Choi2, Hyo-Bae Kim1, Ji-Hoon Ahn2 |
| 소속 | 1Department of Materials Science and Chemical Engineering, 2Hanyang Univ. |
| 키워드 | DRAM; 2-Dimensional Perovskite Oxide; High-k; Atomic Layer Deposition |
