| 초록 |
Recently, two-dimensional (2D) layered materials such as graphene, hexagonal boron nitride (h-BN), and transitional metal dichalcogenides (TMDs) have emerged as a unique and promising alternative growth substrate for nitride semiconductor epitaxy. The atomically-sharp surface free of dangling bonds can enable van der Waals epitaxy (vdWE) which can dramatically loosen the conventional conditions of hetero-epitaxy leading to the resolution of undesired strain in the epi-layer as well as enable advanced functionalities such as mechanical release of grown semiconductor films for flexible device applications. In this work, we investigate the nucleation and growth behavior of gallium nitride (GaN) on multi-layer h-BN sequentially grown by metal-organic chemical vapor deposition (MOCVD). Atomic structural characterization of the hetero-epitaxial interface and the effect of h-BN structural quality on the overgrown GaN film is discussed. |
