| 학회 | 한국재료학회 |
| 학술대회 | 2017년 가을 (11/15 ~ 11/17, 경주 현대호텔) |
| 권호 | 23권 2호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | The Effect of Deposition Temperature on Formation of Single Phase Tin Sulfide Thin Films |
| 초록 | Tin sulfide (SnS) is a good candidate absorber layer for thin film photovoltaics. It has an optical band gap of between 1.2 eV and 1.5 eV and relatively earth abundant, non-toxic absorber material. But still obtained SnS based solar cell efficiencies have been low. In order to improve the efficiency, it is important to improve the film crystallinity by depositing pure single-phase thin film. In our study, SnS thin films were prepared by vapor transport deposition. The effects of deposition temperature, Ar pressure, and annealing time on the properties of SnS layers have been investigated. In order to investigate the influence of the deposition temperature on the characteristics of the thin film, the temperature was changed from 550℃ to 625℃. The characteristics of SnS thin films were investigated through scanning electron microscopy. Thin film thickness and grain size tended to increase with increasing deposition temperature. Further detailed analyses using X-ray diffraction and Raman spectroscopy will be dealt in our poster. |
| 저자 | Dajeong Lee, Jaeyeong Heo |
| 소속 | 전남대 |
| 키워드 | Tin Sulfide; Vapor transport deposition; Solar cell; Absorber layer |
