| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 | 30권 2호 |
| 발표분야 | 분자전자 부문위원회 |
| 제목 | Reactive metal contact of indium tin oxide/self-assembled monolayer interface |
| 초록 | With the aim of improving the electrical properties of indium tin oxide (ITO) electrode/organic interface, Cl- and CF3-terminated self-assembled monolayers (SAMs) that reacts with the indium atoms of the electrode was tested. Contact resistance of the interface between the Cl-terminated surface and the ITO electrode (1.5kΩ) was found to be much lower than that of the ITO thin film deposited on the CF3-terminated surface (21.24kΩ), which is due to the higher dipole moment of In-Cl complex than that of In-F complex. In the case of the ITO films deposited on the CH3-terminated surface, contact resistance (137.99kΩ) was much higher than that of the reactive metal contact because the ITO thin film deposited onto CH3-terminated surface does not react with the SAM (Figure 1). Figure 1. Plots of the measured total resistance (Rt) versus the spacings (d) between the TLM pads. |
| 저자 | 조정호, 박영돈, 김도환, 김웅권, 이종람, 조길원 |
| 소속 | 포항공과대 |
| 키워드 | self-assembled monolayer; indium tin oxide; interface |
