| 초록 |
We demonstrated all-transparent flexible vertical Schottky barrier (SB) transistors and logic gates based on graphene–metal oxide–metal heterostructures and ion gel gate dielectrics. The vertical SB transistor structure was formed by (i) vertically sandwiching a solution-processed indium–gallium–zinc–oxide semiconductor layer between graphene and metallic electrodes, and (ii) employing a separate coplanar gate electrode bridged with a vertical channel through an ion gel. The vertical devices showed high current densities (18.9 Acm–2) and on–off current ratios (＞ 104) at low voltages. Also we fabricate low-power logic gates based on device assemblies, such as the NOT, NAND, and NOR gates, prepared on a flexible substrate. The facile, large-area, and room-temperature deposition of both semiconducting metal oxide and gate insulators integrated with transparent and flexible graphene opens up new opportunities for realizing graphene-based future electronics. |
