| 초록 |
Hexagonal boron nitride (h-BN) is gaining significant attention as a two-dimensional dielectric material, along with graphene and other such materials. In this talk, we demonstrate the growth of highly crystalline, single-layer h-BN on Pt foil through a low-pressure CVD method that allowed h-BN to be grown over a wide area. An electrochemical bubbling-based method was used to transfer the grown h-BN layer from the Pt foil onto an arbitrary substrate. This allowed the Pt foil, which was not consumed during the process, to be recycled repeatedly. The UV-Vis absorption spectrum of the single-layer h-BN suggested an optical band gap of 6.06 eV, while a high-resolution TEM image of the same showed the presence of distinct hexagonal arrays of B and N atoms, which were indicative of the highly crystalline nature and single-atom thickness of the h-BN layer. |
