| 초록 |
The electron transporting layer (ETL) employed in such PSCs has been a critical component for improving their performance. The present work focuses on the synthesis of high-quality Ru-doped compact TiO2 (c-TiO2) ETLs (Ru:c-TiO2) by a simple spin-coating technique. Further, the role of Ru4+ cation doping in c-TiO2 is discussed in detail. A systematic study revealed that the Ru-doping not only significantly influences the open-circuit voltage (Voc), current density (Jsc), and fill factor (FF) but also suppresses the charge recombination in the perovskite devices. The PSCs prepared using Ru-c-TiO2 ETLs with optimum Rudoping content exhibited PCEs of 19.48% for planar and 20.87% for mesoscopic device architecture with enhanced photovoltage. Additionally, the fabricated PSC devices based on 1.5% Ru:c-TiO2 ETLs exhibited air stability over 200 days, which is much higher than that of a control device. |
