| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Al Atom Migration in LaAlO3 Thin Film during Thermal Treatment |
| 초록 | High dielectric constant materials (high-K), such as Al2O3, HfO2, HfSiO, ZrO2, La2O3, LaAlO3 etc., have attracted a great deal of interest because of the dramatic scaling down of Metal-Oxide-Semiconductor field effect transistor (MOSFET) device reaching its physical limit in terms of reduction of thickness. LaAlO3 is promising as a gate dielectric film in future CMOS devices because it has a large band gap (~6.2eV), high dielectric constant (24~27), small lattice miss match with Si (＜ 3%). In this study, Alternating layer of thin La2O3 and Al2O3 films were deposited on p-type Si wafer to form a nanolaminate film. The La2O3 layer was deposited using tris(isopropyl-cyclopentadienyl)lanthanum [La(iPrCp)3] and water by cyclic chemical vapor deposition and Al2O3 layer was deposited using trimethylaluminum (TMA) and water by Atomic Layer Deposition (ALD). The Si wafer surfaces were removed by HF-dipping immediately before film growth. Post-annealing of the samples was performed by Rapid Thermal Annealing (RTA) at 800oC for 30 sec under N2 atmosphere. After RTA the Al atoms in the LaAlO3 films diffused up to the film surface because the La-Silicate layer was formed at interface. Therefore to preserve uniform LaAlO3 films, it is necessary to suppress the silicate formation caused by Si diffusion from substrate. |
| 저자 | 엄다일, 황철성, 김형준 |
| 소속 | 서울대 |
| 키워드 | MOS; high-k; LaAlO3 |
