| 초록 |
Flash memories hold a steady position against the DRAMs through the nonvolatile capability and have been extending the relevant products to a variety of mobile/portable electronic devices. However, the flash memories should be faced with two issues: the operation voltages and the oxide integrity. New requirements may suggest a new category which resolve the two issues. One of the candidates is nano floating gate memories (NFGMs). NFGMs have been researched worldwide in high activity, with emphasis on types of nanocrytals and combined processing, Wh-ich list Pt, Au, , W, Co, Ni, NiSi2, Si, Ge, Si-Ge, etc. The nanocrystals were attempted through metal deposition followed by post-annealing, laser irradiation, implantation, etc. All of such fabrication techniques suffer from interruption in fabrication process for embedded nanocrystals built into the dielectric materials. The current work aims to providing a new fabrication processing for nanostructures toward highly reliable for NFGMs. Continuous Atomic layer deposition was applied to the fabrication of the next-generation nonvolatile nanofloating gate memories. The memory structure was constructed without processing interruption in the form of the Al2O3/NiO/Al2O3 thin films deposited on Si wafers, at the low temperature of 200oC or below.The applicability of nanolaminates Al2O3/NiO/Al2O3 to nonvolatile memories are investigated in terms of structure and physics/ chemistry. The main characterizations were made using capacitance-voltage measurement and current-voltage characteristics. |
