| 학회 |
한국재료학회 |
| 학술대회 |
2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 |
18권 1호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Effect of pre-annealing time and temperature on the properties of CuInS2 absorber layer prepared by sulfurization of In/Cu metallic precursors |
| 초록 |
In this study, CuInS2 (CIS) absorber layer has been grown by sequential process consisting of sputtering of metals with subsequent sulfurization. The sulfurization process was performed two-step processes. First step was carried out by various sulfurization conditions such as pre-treatment time and temperature in the Ar atmosphere, and second step process was carried out at 500 oC for 1 hour under a mixture of N2 (95%) + H2S (5%) atmosphere. Effect of pre-treatment parameters such as pre-treatment time and pre-treatment temperature on the structural, morphological and optical properties of CIS thin films was investigated. The surface morphology, phase structure and composition of the layers were analyzed by Field-emission-scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman spectroscopy and Energy dispersive spectrometer (EDS). The absorption coefficient and the direct band gap of the films were evaluated by optical studies. |
| 저자 |
Seung-Hwan LEE1, Seung-Wook Shin2, Jun-Hee Han2, Myeong-Gil Gang1, K.V.Gurav1, Jae-Ho Yun3, Jong-Ha Moon1, Jin-Hyeok Kim1
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| 소속 |
1Chonnam National Univ., 2KAIST, 3Korea Institute of Energy Research |
| 키워드 |
Solar cell; CIS; CuInS2; absorber layer; sputter; sulfurization
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| E-Mail |
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