| 초록 |
There is a great interest in transition metal dichalcogenides (TMDs) such as MoS2 because of their interesting electronic and optical properties. Thin-film transistors (TFTs) based on single or multilayer MoS2 exhibits intriguing characteristics: high on/off-current ratio (~106), high mobility at room temperature (up to ~100 cm2V-1s-1), and low subthreshold swing (~70 mV decade-1). However, one of the challenges to realize high performance MoS2 TFTs is the detailed understanding and control of the interfaces of TMDs with metal electrodes and dielectrics. Without the deposition of high-quality dielectrics on TMDs and the formation of low-resistivity metal-MoS2 junctions, any attempts to improve transistor performance can be fundamentally hampered. This talk will present a review of the recent studies on multilayer MoS2 TFTs in my group investigating the selective annealing of Ti/Au metal contacts using picosecond ultra-fast pulsed laser, the variability of electrical properties of Ti contacts, and the electrical properties of Al2O3-MoS2 interfaces. |
