| 학회 | 한국재료학회 |
| 학술대회 | 2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 | 16권 2호 |
| 발표분야 | B. Nano materials and processing Technology(나노소재기술) |
| 제목 | Resistive Switching in Au/ZnO/ITO Thin Film Stacks for Nonvolatile Random Access Memory |
| 초록 | Resistance random access memory (RRAM) has attracted great attention as a new generation nonvolatile memory. The resistance of some dielectric materials such as TiO2, ZnO, NiO, Al2O3, Nb2O5, and SiO2 could be changed high to low (or low to high) resistance state when external voltage is applied. Using this characteristic, data can be stored as the states of resistance. RRAM is promising to perform as a low power consumption high functional memory device with its low operation voltage, high reading speed, high On/Off ratio and high storage density. Here, we demonstrate the low temperature high-performance RRAM device based on solution processed ZnO thin film. Our device has Au/ZnO/ITO structure, and ZnO thin film is formed by spin coating from Zn aqueous solution. We monitored the switching behaviour by measuring I-V curves using semiconductor parameter analyzer. In comparison to another device which has a ZnO layer by sputtering, our solution processed ZnO device has reasonable properties such as switching stability, On/Off ratio, low operation voltage. It shows good switching performances, and the resistance ratio is approximately 1000. |
| 저자 | 김아름, 전태환, 문주호 |
| 소속 | 연세대 |
| 키워드 | RRAM; switching; ZnO |
