| 초록 |
Rhenium disulfide (ReS2), one of the two-dimensional transition metal dichalcogenides (TMDs), have been attracting interest owing to its unique optical, electrical, mechanical properties. In anisotropic distorted octahedral (1T) crystal structure of ReS2, the layers of ReS2 are interacted by weak van der Waals forces, resulting in many novel properties, which is different from the conventional TMDs. However, these weak interlayer coupling effects suppress in-plane uniform growth, which make out-of-plane growth of ReS2. In order to grow along in-plane direction, ReS2 has been synthesized on various growth substrate by chemical vapor deposition (CVD). In this work, we selected graphene as growth substrate due to its chemically inert surface without dangling bonds and synthesized ReS2 on graphene substrate via CVD. The results in this study will provide valuable information in the synthesis of ReS2/graphene heterostructures, will have a beneficial influence on various applications. |
