| 초록 |
Graphene is promising for photodetector materials because of its broadband detection and high electrical mobility (200,000 cm2/Vs). However, chemical vapor deposition grown graphene suitable for mass production has a problem of deterioration of device characteristics and low array process yield due to poly methyl methacrylate (PMMA), which is used to support the transfer. In this research, the optimization of O2 plasma treatment conditions effectively eliminated PMMA residue, which is an obstacle to CVD grown graphene application, in a short process time. We have successfully fabricated six graphene phototransistors arrays with uniform properties on 1 cm by 1 cm substrates. Contact angle and Raman spectroscopy analysis showed that O2 plasma treatment was effective for surface contamination control. |
