| 학회 | 한국재료학회 |
| 학술대회 | 2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 | 26권 1호 |
| 발표분야 | E. 환경/센서 재료 분과 |
| 제목 | In-depth investigation of growth mechanism for high quality Hg2Br2 crystal |
| 초록 | Basically, physical vapor transport (PVT) technique in closed ampoules in vertical mode has been used for synthesis of mercurous bromide (Hg2Br2) single crystals. And it is important to grow a high-quality single crystal that can be applied to the fabrication of a high-performance acousto-optic tunable filter (AOTF). However, it is a very challenging work to grow it as a form of single crystals. Rather, polycrystalline growth is more dominant than single crystals. Therefore, we investigated the orientation dependence of Hg2Br2 crystal which is critical factor to affect a quality of crystal growth. Herein, we synthesized two types of crystal using PVT growth: quasi-single and single crystal of Hg2Br2. The PVT grown Hg2Br2 crystals, showing a predominant facet growth mode with the (001) plane, were characterized using various analysis technique. The single crystal Hg2Br2 offered a more uniform strain than that of the quasi-single crystal, as verified by X-ray diffraction (XRD). To identify the chemical compound states, the X-ray photoelectron spectroscopy (XPS) data of the two crystals were obtained. Meanwhile, the binding energy states of the as-synthesized Hg2Br2 crystals were similar regardless of the crystal type. Furthermore, Raman Spectroscopy and Transmission Electron Microscopy (TEM) were also measured to clarify the information on the atomic vibration mode and atomic structure for single and quasi-single crystal growth. Therefore, the studies of the growth mechanism will provide a chance to synthesize high quality Hg2Br2 crystals for potential AOTF device applications. |
| 저자 | Ojun Kwon1, Tae Hyeon Kim2, Shi-Gwan Woo, Byungjin Cho1 |
| 소속 | 1Department of Advanced Material Engineering, 2Chungbuk National Univ. |
| 키워드 | <P>PVT; AOTF; Hg<SUB>2</SUB>Br<SUB>2</SUB></P> |
