| 학회 |
한국공업화학회 |
| 학술대회 |
2019년 봄 (05/01 ~ 05/03, 부산 벡스코(BEXCO)) |
| 권호 |
23권 1호 |
| 발표분야 |
우수논문(구두)_박사과정 |
| 제목 |
Wafer-scale and selective-area growth of high-quality hexagonal boron nitride on Ni(111) by metal-organic chemical vapor deposition |
| 초록 |
We demonstrate wafer-scale growth of high-quality hexagonal boron nitride (h-BN) film on Ni(111) template using metal-organic chemical vapor deposition (MOCVD). Compared with inert sapphire substrate, the catalytic Ni(111) template facilitates a fast growth of high-quality h-BN film at the relatively low temperature of 1000 °C. Wafer-scale growth of a high-quality h-BN film with Raman E2g peak FWHM of 18~24 cm−1 is achieved, which is to the best reported for MOCVD. Systematic investigation of the MOCVD-grown h-BN films reveals a substantial difference in catalytic capability between the Ni(111) and sapphire surfaces that enables selective-area growth of h-BN at pre-defined locations over a whole 2-inch wafer. These achievement and findings have advanced our understanding of the growth mechanism of h-BN by MOCVD and will contribute an important step toward scalable and controllable production of high-quality h-BN films for practical integrated 2D materials-based systems and devices. |
| 저자 |
정호경, 김재원, 문석호, 김종규
|
| 소속 |
포항공과대 |
| 키워드 |
hexagonal boron nitride (h-BN); MOCVD
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| E-Mail |
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