| 초록 |
The conventional top surface imaging process offers high resolution due to the anisotropic pattern transfer of a thin silicon-containing top layer into the thick underlying polymer film. However, controlling of the silylation reaction on the specific region still remains a challenge. Therefore, thin layers of silicon-containing polymers were used instead of the silylation process. In this report, we propose a new imaging method by combining an interfacial imaging reaction with thin layer imaging. The acid produced in the exposed areas of the bottom chemically amplified resist layer induces the crosslinking reaction of the top thin layer. Also, we propose a novel photoresists using blends of polymers containing photoactive diazo-groups and amine-functionalized silicon compounds to adjust the properties of the imaging layer. To fabricate highly ordered nanostructures, self-assembly of a silicon-containing block copolymer was used as a thin top layer in the bilayer system. |
