| 초록 |
Ultra-thin HfSixOy and HfSixOy/SiO2 films were grown on Si surface by ALCVD using a precursor combination of Hf(NC2H5)4 and Si(OC4H9)4 at 300 oC. We investigated the correlation between physcio-chemical and electrical properties of the grown films. The film structure and thickness were characterized by TEM, XRR, XPS, and specular ellipsometry (SE). GI-XRD system of Pohang Light Source (PLS) 8C1 and 10C1 beam-line was employed to address the phase separation of the 8 nm films. For electrical characterization of the silicate films, capacitance-voltage (C-V) and current-voltage (I-V) measurements were performed. HfSixOy/SiO2 bi-layer films of ~1.7 nm SiO2 layer, showed significantly improved electrical properties. |
