초록 |
Molybdenum chalcogenide (MoOxSy) thin films were synthesized by rf magnetron sputtering in ultra high vacuum (UHV) chamber. To control the characteristics of the films, MoOxSy thin films were obtained at various mixing gas ratios of argon and oxygen gases. MoOxSy thin films were characterized with alpha step, X-ray photoelectron spectroscopy (XPS), ultra violet photoelectron spectroscopy (UPS), contact angle, and Hall effect measurement. The thickness of MoOxSy thin films was decreased with increasing the oxygen gas ratios. The oxidation states of Mo and S were studied with high resolution Mo 3d and S 2p XPS spectra. The work function of thin films was calculated by UPS and it is increased with increasing the oxygen gas ratio. The conductivity is dramatically increased at 1.0 sccm of O2 gas flow rate. The contact angle of films were analyzed by water and ethylene glycol. |