| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Electrical Properties of Aluminium Oxide Gate Dielectric Grown by Atomic Layer Deposition at Different Growth Temperture |
| 초록 | The thin film transistors (TFTs) operating at low voltage are required to reduce the consumption power of devices. The bound of operating voltage is also affected by the electrical properties of dielectric layers. Recently, the fabrication of transparent or flexible TFTs became very attractive research field. For it, among various dielectric materials, Al2O3 has attracted interest as high-k dielectric and passivation layers, because of its excellent electrical properties such as chemical and thermal stability, high dielectric constant (~ 9) and large band gap (~ 8.7 eV). Atomic layer deposition (ALD) system is the most promising approach to realize high performance of dielectric layers, because of low impurity contamination and good uniformity even at low growth temperatures. Because the ALD process based on chemical reaction is based on thermal reaction, the growth temperature is one of the most important factors. Also, reduced process temperature is required for the flexible electronics. In this work, the Al2O3 layers were deposited by ALD with trimethylaluminium (TMA) and water (H2O) sources on Molybdeium/glass. These dielectrical layers were applied to the IGZO oxide TFTs fabricated at low temperatures. The leakage or breakdown voltage of the Al2O3 gate dielectircs deposited at differnt temperatures were investigated with metal-insulator-metal structure. Also, the IGZO TFT using Al2O3 grown at 150 oC showed relatively good performance. |
| 저자 | 김예균, 안철현, 윤명구, 조성운, 조형균 |
| 소속 | 성균관대 |
| 키워드 | Al2O3; ALD; IGZO TFT |
