| 초록 |
Arsenic (As) is highly toxic but has been widely utilized for numerous applications. As contamination is associated with fatal diseases that cause serious threat to human health, such as skin lesions, peripheral neuropathy, diabetes, renal system effects, cardiovascular disease, and cancer. To improve safety, we demonstrate the fabrication of highly sensitive and selective field-effect transistor (FET) type arsenic sensor. The arsenic sensor was constructed using arsenic binding aptamers immobilized on carboxylic polypyrrole-coated molybdenum disulfide nanoparticles (CP-MoS2) as the signal transducer. Liquid-ion gated FET sensor represented excellent sensing performance toward target As ions in liquid state, with very low concentration (100 pM). Moreover, the arsenic sensor had a highly selective response to As ions in mixed solutions and showed a very rapid response, providing signal changes in less than 1 s. |
