| 학회 | 한국재료학회 |
| 학술대회 | 2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 | 19권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Fabricating semi-transparent p-NiO/n-ZnO nanowire heterojunction ultraviolet photosensors |
| 초록 | ZnO has been studied as candidate material for optical devices alternative to GaN. However, due to the difficulty in obtaining p-ZnO, p-ZnO/n-ZnO homojunction based optical devices are hard to make. So many compact UV sensor have been prepared from p-n heterojunctions with n-ZnO, such as Si, GaN, NiO, Cu2O. Especially NiO is a p-type semiconductor with a wide range of applications, such as transparent conductive films, electrochromic devices, and as a functional layer material in chemical sensors. NiO has wide bandgap of 3.6-4.0 eV at room temperature. All-oxide ultraviolet (UV) photosensors based on NiO/ZnO heterostructure were fabricated on corning glass substrate. The p-type NiO layers were directly deposited on the ZnO nanowire arrays/AZO bottom electrode for the formation of p-n diode, and followed by the growth of the ITO top electrode layer for the electrical interconnection of nanostructures. Furtermore, the all-oxide ITO/p-NiO/n-ZnO nanowire/AZO/glass structure showed transmittance value of about 60 % at visible region, resulting in semi-transparent property. All-oxide ZnO nanowire based UV sensor exhibited improved photoresponsivity than the ZnO film based device. |
| 저자 | 이기룡, 조형균 |
| 소속 | 성균관대 |
| 키워드 | ZnO; NiO; UV; sensor; nanowire |
