| 학회 |
한국화학공학회 |
| 학술대회 |
2010년 가을 (10/21 ~ 10/22, 대전컨벤션센터) |
| 권호 |
16권 2호, p.2014 |
| 발표분야 |
재료 |
| 제목 |
Fabrication and characterization of n-ZnO nanorods/p+-TiO2 heterojunction devices |
| 초록 |
Trivalent/bivalent metal ions doped p+-TiO2 were prepared wet-chemically and the solution was deposited on indium tin oxide (ITO) coated glass substrates by spin coating method. Vertically aligned n-ZnO nanorods were grown on p+-TiO2/ITO/glass substrates by a seed layer assisted growth technique. Current(I)-voltage(V) characteristics for the Ag/n-ZnO nanorod/p+-TiO2/ITO assembly showed rectifying behaviour with relatively small turn-on (V0) voltages. The effect of thickness and morphologies of n-ZnO and the composition ofp+-TiO2 thin films on the electrical properties were studied. X-ray photoelectron spectroscopy (XPS) confirmed Ti4+ oxidation state of the Ti2p band in the doped p+-TiO2. |
| 저자 |
Soumen Das, 김진환, 김대영, 최철민, 한윤봉
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| 소속 |
전북대 |
| 키워드 |
Thin film; Bipolar device; XPS
|
| E-Mail |
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| 원문파일 |
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