| 초록 |
The wide variety of solution processes makes inorganic oxide semiconductors highly attractive and technologically advantageous for large-area, high throughput, and low-cost device production. Recently, solution processible metal-oxide precursors were widely investigated for high performance electronic devices such as portable electronics and flexible electronics. However, there have been some limitations for the utilization of organic gate dielectrics for flexible electronics with solution processible inorganic semiconductors such as high processing temperature and weak chemical resistance in precursor solution. In this study we designed and synthesized high thermal and chemical resistant pyridine containing polybenzoxazole as organic gate dielectric for solution processible inorganic semiconductor TFTs. |
