| 학회 |
한국고분자학회 |
| 학술대회 |
2003년 봄 (04/11 ~ 04/12, 연세대학교) |
| 권호 |
28권 1호, p.367 |
| 발표분야 |
특별 심포지엄 |
| 제목 |
Influence of Gate Dielectric Layer on the Mobility of Organic Thin Film Transistors for Flexible Display |
| 초록 |
Mobility characteristics of pentacene-based organic thin film transistors (OTFTs) were investigated by employing gate dielectric layers prepared with different materials and deposition methods. For the OTFTs with the pentacene films and octadecyltrichlorosilane (OTS) interfacial layers deposited under the identical conditions, the mobility varied in the range of 0.07cm2/Vs to 1.9cm2/Vs when various gate dielectric layers of silicon-oxides and silicon-nitrides were employed. The silicon-oxides by PECVD of tetraethylorthosilicate (TEOS) yielded the highest mobility, while the silicon-oxides by PECVD of SiH4 yielded the lowest mobility. According to the AFM and X-ray diffraction results, the dominant feature of the gate dielectric in determining the OTFT mobility was found to be the surface roughness which in turn influence not only the grain size but also the packing and orientation of deposited pentacene films. |
| 저자 |
강지훈;김지아;황상수;홍상미;표상우;홍종인;주영창;김영관;윤도영 |
| 소속 |
서울대 |
| 키워드 |
organic thin film transistor; OTFT
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| E-Mail |
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