| 초록 |
Cu2ZnSn(S,Se)4(CZTSSe) absorber thin films were prepared on Mo coated soda-lime glass substrates by sulfurization of stacked Cu/Sn/Zn precursor thin films. Absorber layers were sulfo-selenized in rapid thermal annealing (RTA) system. The resulting films were processed into solar cell devices by following standard procedures that includes chemical bath deposition of CdS film (~60 nm), radio frequency (RF) sputtering of i-ZnO (~100 nm) and Al-ZnO (AZO) film (~600 nm), and direct current (DC) sputtering of a patterned Al grid as the top electrode. Sulfo-selenization process plays an important role in improving the solar energy conversion of CZTSSe thin film solar cells. Effects of S/Se quantities using Pressured Rapid Thermal Annealing(PRTA) processes on the microstructure, crystallinity, electrical properties, and cell efficiencies of CZTSSe thin film solar cells are studied using field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Raman spectroscopy, I-V measurement, and external quantum efficiency measurement system(EQE). |
