| 학회 | 한국재료학회 |
| 학술대회 | 2004년 가을 (11/05 ~ 11/05, 인하대학교) |
| 권호 | 10권 2호 |
| 발표분야 | 세라믹스 |
| 제목 | 졸겔 방법으로 제작된 Pb(Zr,Ti)O3 박막의 열처리 과정에 의한 물리적, 전기적 특성 변화 효과 연구 |
| 초록 | 1. Introduction Ferroelectric Pb(Zr,Ti)O3(PZT) thin films are strongly dependent on parameters such as composition, microstructure, orientation and the types of substrates used. It is still an important issue to prepare crack-free PZT films, obtainable through precisely controlling the processing conditions. This paper illustrates the preparation of crack-alleviated PZT thin films by manipulation of the heating period and rate. 2. Experimental The films with different Zr/Ti ratio of 50:50 were prepared by spin-casting at 3000rpm for 30secs on Pt/Ti/SiO2/Si substrates. These films were dried at a temperature of 200℃ for 1min, following a pyrolysis procedure at 400℃ for 5mins. Three different method of film preparation was conducted-a single-step annealing process for 30mins in (a) O2 environment and (b) air ambient, and (c) a 2-step process carried out in air ambient, following a O2 annealing process, both conducted for 30mins. Films with a thickness of 200nm were observed through cross-sectional images and its surface morphology at various annealing temperatures was characterized by scanning electron microscopy. An x-ray diffraction θ-2θ scans were used to investigate the crystallographic properties of the films. Measurements of the dielectric properties were carried out using HP4194A Impedance Analyzer and polarization-field hysteresis loops was extracted by an RT66A ferroelectric tester. Characterizations of the fatigue properties were conducted until 1×1010 switching cycles with an applied frequency of 1MHz. 3. Discussions PZT films were preferably oriented to the (111) direction. Unlike the 2-step process, a 1-step process revealed (100)-oriented films at low annealing temperatures. Ferroelectric properties showed that films annealed at 600℃ possesses high remnant polarization and low coercive voltage. Films prepared by the 2-step heat-treatment revealed relatively enhanced polarization values, having a saturation property at low applied voltages and larger remnant polarizations. The compensation to oxygen content in the films are the main reason for such enhanced ferroelectric properties. |
| 저자 | 심동현, 박재문, 남광우, 박광서 |
| 소속 | 서강대 |
| 키워드 | 강유전체; PZT 박막; 졸겔방법 |
