| 초록 |
Amorphous indium zinc oxide (IZO) thin film was successfully fabricated via self-combustion reaction for the solution-processed thermoelectric device. Thermal and chemical analysis of IZO precursor containing the fuel and oxidizer verified the generation of exothermic heat at a relatively low annealing temperature and how the intense heat generated from the exothermic reaction influenced on the formation of metal oxide frameworks. IZO thin films with a composition ratio of In/Zn=6:2 at low annealing temperature of 350 oC, showed an enhanced electrical conductivity of 327 S cm-1, Seebeck coefficient of 50.6 μV K-1, and power factor of 83.8 μW m-1 K-2, respectively. Moreover, IZO thin film prepared even at temperature of 300 °C also exhibited large power factor of 78.7 μ W m-1 K-2 with the electrical conductivity of 168 S cm-1. |
